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PDT400N16_15 Datasheet, PDF (2/4 Pages) National Instruments Corporation – THYRISTOR | |||
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â é»æ°çç¹æ§ Electrical Characteristics
é
ç®
Parameter
è¨å·
Symbol
æ¡ä»¶
Conditions
ãã¼ã¯ãªãé»æµ
Peak Off-State Current
ãã¼ã¯éé»æµ
Peak Reverse Current
ãã¼ã¯ãªã³é»å§
Peak Off-State Voltage
ããªã¬ã²ã¼ãé»æµ
Gate Current to Trigger
ããªã¬ã²ã¼ãé»å§
Gate Voltage to Trigger
éããªã¬ã²ã¼ãé»å§
Gate Non-Trigger Voltage
è¨çãªãé»å§ä¸æç
Critical Rate of Rise of Off-State Voltage
ã¿ã¼ã³ãªãæé
Turn-Off Time
ã¿ã¼ã³ãªã³æé
Turn-On Time
é
ãæé
Delay Time
ç«ã¡ä¸ããæé
Rise Time
ã©ããã³ã°é»æµ
Latching Current
ä¿æé»æµ
Holding Current
ç±æµæ
Thermal Resistance
æ¥è§¦ç±æµæ
Thermal Resistance
IDM
Tj = 125â, VDM = VDRM
IRM
Tj = 125â, VRM = VRRM
VTM
Tj = 25â, ITM = 1300A
IGT
VD = 6 V, IT = 1A
VGT
VD = 6 V, IT = 1A
VGD
Tj =125â, VD = 2/3 VDRM
Tj =ï¼40â
Tj = 25â
Tj = 125â
Tj =ï¼40â
Tj = 25â
Tj = 125â
dv/dt
tq
t gt
td
tr
Tj =125â, VD = 2/3 VDRM
Tj =125â, ITM = Io, VD = 2/3 VDRM
dv/dt = 20V/μs, VR = 100V, âdi/dt = 20A/μs
Tj =25â, VD = 2/3 VDRM
IG = 300mA, diG/dt = 0.2A/μs
IL
Tj =25â
IH
Rth(j-c)
Rth(c-f)
Tj =25â
æ¥åé¨ï¼ã±ã¼ã¹é
Junction to Case
ケース-ï¾ï½¨ï¾éï¼ï½»ï½°ï¾ï¾ï½ºï¾ï¾ï¾ï½³ï¾ï¾ï¾å¡å¸
Case to Fin, Greased
ç¹æ§å¤ï¼æ大ï¼
Maximum Value
æå° æ¨æº æ大
Min Typ Max
100
100
1.55
300
150
80
5
3
2
0.25
500
6
2
4
150
60
0.07
0.05
åä½
Unit
mA
mA
V
mA
V
V
V/μs
μs
μs
μs
μs
mA
mA
â/W
â/W
質 é ï¼ï¼ï¼ ç´960 g
Approximate Weight
ï¼ã¢ã¼ã å½ãã®å¤ Value Per 1 Arm.
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