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30GFA40_15 Datasheet, PDF (1/2 Pages) National Instruments Corporation – Fast Recovery Diode | |||
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3A Avg. 400Volts
30GFA40
Fast Recovery Diode
DSE-13049ï¼1/2ï¼
æ§é ï¼æ¡æ£åã·ãªã³ã³ãã¤ãªã¼ãï¼FRDï¼ï¼ãªã¼ãç·å
Construction :Diffusion-type Silicon Diodeï¼Axial Lead Type
ç¨éï¼é«å¨æ³¢æ´æµç¨
Application : High-Frequency Rectification
ç¹é·
ä½ãã¤ãº
é«é
trr=30ns
Feature
Low Noise
High Speed Recovery
trr=30ns
å¤å½¢å¯¸æ³å³ OUTLINE DRAWING
Package : Axial 7
Dimension : mm
â Weight
: 1.05gï¼typ.ï¼
â Flammability : Epoxy Resin=UL94V-0 Recognized
â 絶対æ大å®æ ¼ï¼è¡¨ç¤ºç¡ãå ´å Ta=25âï¼ Absolute Maximum Ratings (Ta = 25 oC unless otherwise stated)
é
ç®
Item
è¨å·
Symbol
æ¡ä»¶
Conditions
å®æ ¼å¤
Rating
ããè¿ããã¼ã¯éé»å§
Repetitive Peak Reverse Voltage
VRRM
ï¼
400
éããè¿ããã¼ã¯éé»å§
Non-Repetitive Peak Reverse Voltage
VRSM
ï¼
440
å¹³åæ´æµé»æµ
Average Rectified Output Current
50Hz æ£å¼¦åæ³¢éé»
IO
æµæè² è·
Half Sine Waveï¼
Ta=30â *1
T1=92â
Resistive Load
(T1:Lead Temperature)
1.35
3.0
å®å¹é é»æµ
RMS Forward Current
ãµã¼ã¸é é»æµ
Surge Forward Current
IF(RMS)
IFSM
ï¼
50Hz æ£å¼¦åæ³¢ 1 ãµã¤ã¯ã« éç¹°ãè¿ã
50Hz half Sine Waveï¼1 cycleï¼Non-repetitive
4.71
60
åä½æ¥å温度ç¯å²
Operation Junction Temperature Range
Tjw
ï¼
-40ï½+150
ä¿å温度ç¯å²
Storage Temperature Range
Tstg
ï¼
-40ï½+150
åä½
Units
V
V
A
A
A
â
â
â é»æ°çã»ç±çç¹æ§ Electrical / Thermal Characteristics
é
ç®
Item
ãã¼ã¯éé»æµ
Peak Reverse Current
è¨å·
Symbol
IRM
æ¡ä»¶
Conditions
VRM=VRRMï¼Tj=25â
ãã¼ã¯é é»å§
Peak Forward Voltage
éå復æé
Reverse Recovery Time
VFM
IFM=3.0Aï¼Tj=25â
trr
IFM=3.0Aï¼-di/dt=50A/µsï¼Tj=25â
ç±æµæ
Thermal Resistance
Rth(j-a)
æ¥åé¨ã»å¨å²é Junction to Ambient *1
Rth(j-l)
æ¥åé¨ã»ãªã¼ãé Junction to Lead
*1 : åä½ãã£ã³ç¡ãï¼Without Fin or P.C. Board
æå°å¤
min.
-
代表å¤
typ.
-
æ大å¤
max.
20
åä½
Units
µA
-
- 1.25 V
30
ns
-
-
90 â/W
-
-
15 â/W
â æ¬è³æã®è¨è¼å
容ã¯è£½åæ¹è¯ãªã©ã®ããäºåãªãå¤æ´ãããã¨ãããã¾ãã
â The content specified herein is subject to change without notice.
Date of issue:2013.10.2
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