NSGM75GB12A Datasheet, PDF (6/6 Pages) Nell Semiconductor Co., Ltd – IGBT MODULE(2 IN ONE-PACKAGE)

SEMICONDUCTOR
NSGM75GB Series RRooHHSS
Fig.15 Typ.switching losses , E=f (RG) , inductive load , Tj=125 C Fig.16 Forward characteristics of fast recovery
Parameter:VGE=600V , VGE=+15V , IC=75A
reverse diode , IF=f (VF)
Parameter:Tj
30
150
140
Eon
130
120
110
20
100
90
80
Tj=125 C
Tj=25 C
15
70
Eoff
60
10
50
40
30
5
20
10
0
0 10 20 30 40 50 60 70 80
RG (_Ω)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VF (V)
Fig.17 Transient thermal impedance Diode , ZthJC=f (tp)
Parameter:D=tp / T
10 ⁰
10 ^-1
10 ^-2
10 ^-3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 ^-4
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
tp (s)
www.nellse mi.co m
Page 6 of 6