2N60 Datasheet, PDF (6/8 Pages) Unisonic Technologies – 2 Amps, 600 Volts N-CHANNEL MOSFET

SEMICONDUCTOR
■ TYPICAL CHARACTERISTICS
Fig.1 Drain current vs. Drain-source breakdown
voltage
300
250
200
150
100
50
0
0
200 400 600 800 1000
Drain-source breakdown voltage, BV_DSS (V)
2N60 Series RRooHHSS
Nell High Power Products
Fig.2 Drain current vs. gate threshold
voltage
300
250
200
150
100
50
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Gate threshold voltage, V_GS(TH) (V)
Fig.3 Drain-source on-state resistance
characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
Drain to source voltage, V_DS (V)
Fig.4 Drain current vs. source-drain
voltage
2.5
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Source to drain voltage, V_SD (V)
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