N-HFA15TB60 Datasheet, PDF (5/6 Pages) Nell Semiconductor Co., Ltd – FRED Ultrafast Soft Recovery Diode, 15 A

SEMICONDUCTOR
N-HFA15TB60 RRooHHSS
Nell High Power Products
Fig.9 Reverse Recovery Parameter Test Circuit
V_R = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig.10 Reverse Recovery Waveform and Definitions
I_F
0
(3)
t_rr
t_a
t_b
(2)
I_RRM
(4)
Q_rr
0.5 I_RRM
dI_(rec)M /dt ⁽⁵⁾
(1) ^dIF^/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) I_RRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 I_RRM and 0.50_RI_RM
extrapolated to zero current.
0.75 I_RRM
(4) Q_rr - area under curve defined by t_rr
and I_RRM
t_rr x l_RRM
Qrr = ₂
(5) dI_(rec)M/dt - peak rate of change of
current during tb portion of t_rr
www.nellsemi.com
Page 5 of 6