N-HFA15PB60 Datasheet, PDF (4/6 Pages) Nell Semiconductor Co., Ltd – FRED Ultrafast Soft Recovery Diode, 15 A

SEMICONDUCTOR
Fig.5 Typical reverse recovery time vs. dIF/dt
100
IF = 30 A
IF = 15 A
80
IF = 5 A
60
40
20 _{VR = 200 V}
TJ = 125 °С
TJ = 25 °С
0
100
dI_F/dt (A/µs)
1000
Fig.7 Typical Stored Charge vs. dIF/dtI
800
VR = 200 V
TJ = 125 °С
TJ = 25 °С
600
IF = 30 A
400 IF= 15 A
IF = 5 A
200
0
100
dI_F/dt (A/µs)
1000
N-HFA15PB60 ^RRooHHSS
Nell High Power Products
Fig.6 Typical recovery current vs. dIF/dt
25
VR = 200 V
TJ = 125 °С
20 ^{TJ = 25 °С}
15
IF = 30 A
IF = 15 A
IF = 5 A
10
5
0
100
dI_F/dt (A/µs)
1000
10000
Fig.8 Typical dI_(rec)M/dt vs. dIF/dt
IF = 30 A
IF = 15 A
IF = 5 A
1000
100
100
VR = 200 V
TJ = 125 °С
TJ = 25 °С
dIF/dt (A/µs)
1000
www.nellsemi.com
Fig.9 Reverse recovery parameter test circuit
V_R = 200 V
L = 70 µH
0.01Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
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