NST200F60 Datasheet, PDF (3/5 Pages) Nell Semiconductor Co., Ltd – FRED Ultrafast Soft Recovery Diode, 100A × 2

SEMICONDUCTOR
NST200F60 / NST200F60-A RRooHHSS
Nell High Power Products
Fig.1a Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.45
0.40
0.9
0.35
0.7
0.30
0.25
0.5
0.20
0.15
0.3
0.10
0.1
0.05
0.05
0
10^-5
SINGLE PULSE
10^-4
10^-3
10^-2
Rectangular pulse duration (seconds)
Note :
t₁
t2
Duty Factor D =t1/t2
Peak T_J = P_DM xZ_θJC+T_C
0.1
1
Fig.2 Forward current vs. forward voltage
300
250
200
150
T_J =150°C
100
T_J =125°C
50
T_J =25°C
T_J =-55°C
0
0
0.5
1
1.5
2
2.5
Anode-to-cathode voltage (V), V_F
Fig.4 Reverse recovery charge vs. current rate of change
3000
2500
T_J =125°C
T_R =400V
100A
2000
200A
1500
50A
1000
500
0
0 200 400 600 800 1000 1200
Current rate of change (A/μs), -di_F/dt
Fig.3 Reverse recovery time vs. current rate of change
250
200A
T_J =125°C
T_R =400V
200
100A
50A
150
100
50
0
0 200 400 600 800 1000 1200
Current rate of change(A/μs), -di_F/dt
Fig 5. Reverse recovery current vs. current rate of change
50
T_J =125°C
T_R =400V
40
200A
30
100A
20
50A
10
0
0 200 400 600 800 1000 1200
Current rate of change (A/μs), -di_F/dt
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