NST120F06 Datasheet, PDF (3/6 Pages) Nell Semiconductor Co., Ltd – FRED Ultrafast Soft Recovery Diode, 60A × 2

SEMICONDUCTOR
NST120F06 / NST120F06-A RRooHHSS
Nell High Power Products
Fig.1a Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.70
0.60
D =0.9
0.50
0.7
0.40
0.5
0.30
0.20
0.3
0.10
0.1
0
-5
10
0.05
-4
10
SINGLE PULSE
-3
10
-2
10
Rectangular pulse duration (seconds)
t1
t2
Duty Factor D =t1/t2
Peak T_J = P_DM xZ_θJC+T_C
-1
10
1.0
Dissipated Power
(Watts)
Fig.1b transient thermal impedance model
T_J (°C)
T_C (°C)
0.159
0.255
0.186
0.0056
0.0849
0.489
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Fig.2 Forward current vs. forward voltage
200
180
160
140
120
100
80
60
40
20
0
0
T_J =125°C
T_J =150°C
T_J =25°C
T_J =-55°C
0.5
1
1.5
2
2.5
Anode-to-cathode voltage (V), V_F
Fig.3 Reverse recovery time vs. current rate of change
200
180
160
140
120
100
80
60
40
20
0
0
120A
TJ = 125°C
VR = 800V
60A
30A
200 400 600 800 1000 1200
Current rate of change(A/μs), -di_F/dt
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