N-30ETU06 Datasheet, PDF (3/6 Pages) Nell Semiconductor Co., Ltd – FRED Ultrafast Soft Recovery Diode, 30 A

SEMICONDUCTOR
Fig.1 Typical forward voltage drop characteristics
1000
100
10
Tj=175°
Tj=125°
Tj=25°
1
0 0.5 1 1.5 2 2.5 3 3.5
Forward voltage drop-V_F(V)
Fig.3 Typical junction capacitance vs. reverse voltage
1000
100
Tj=25°
10
0 100 200 300 400 500 600
Reverse voltage-V_R(V)
N-30ETU06 RRooHHSS
Nell High Power Products
Fig.2 Typical values of reverse current vs.
reverse voltage
1000
100
10
1
0.1
0.01
0.001
0.0001
0
Tj=175°
Tj=150°
Tj=125°
Tj=100°
Tj=25°
100 200 300 400 500 600
Reverse voltage-V_R(V)
Fig.4 Junction capacitance vs. reverse voltage
200
180
160
140
120
100
80
60
40
20
0
1
10
100 200
Reverse voltage (V), V_R
Fig.5 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.90
0.80
0.70
D = 0.9
0.60
0.7
0.50
0.5
0.40
0.30
0.3
0.20
0.10
0.1
0.05
0
10^-5
10^-4
SINGLE PULSE
10^-3
10^-2
Rectangular pulse duration (seconds)
Note:
t1
t₂
Duty Factor D =t1/t2
Peak T_J = P_DM xZ_θJC+T_C
10^-1
1.0
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