N-30EPU12 Datasheet, PDF (3/6 Pages) Nell Semiconductor Co., Ltd – FRED Ultrafast Soft Recovery Diode, 30 A

SEMICONDUCTOR
N-30EPU12 Series RRooHHSS
Nell High Power Products
Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.90
0.80
D=0.9
0.70
0.60
0.7
0.50
0.5
0.40
0.30
0.20
0.10
0
10^-5
0.3
0.1
0.05
10^-4
SINGLE PULSE
10^-3
10^-2
Rectangular pulse duration (seconds)
Note:
t1
t2
Duty Factor D =t1/t2
Peak TJ = PDM xZθJC+TC
10^-1
1.0
Fig.2 Forward current vs. forward voltage
200
180
160
140
T_J =175°C
120
100
80
T_J =125°C
60
T_J =25°C
40
T_J =-55°C
20
0
0
1
2
3
4
5
Anode-to-cathode voltage (V), V_F
Fig.3 Reverse recovery time vs. current rate of change
600
500
T_J =125°C
V_R =800V
60A
400
30A
300
15A
200
100
0
0 200 400 600 800 1000 1200
Current rate of change(A/μs), -di_F/dt
Fig.4 Reverse recovery charge vs. current rate of change
5000
4000
T_J =125°C
V_R =800V
60A
3000
2000
1000
30A
15A
0
0 200 400 600 800 1000 1200
Current rate of change (A/μs), -di_F/dt
Fig 5. Reverse recovery current vs. current rate of change
35
T_J =125°C
V_R =800V
30
25
20
60A
30A
15
15A
10
5
0
0 200 400 600 800 1000 1200
Current rate of change (A/μs), -di_F/dt
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