60EPU12 Datasheet, PDF (3/6 Pages) Nell Semiconductor Co., Ltd – Ultrafast recovery

SEMICONDUCTOR
60EPU12 Series RRooHHSS
Nell High Power Products
Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.45
0.40
D = 0.9
0.35
0.30
0.7
0.25
0.5
0.20
0.15
0.3
0.10
0.05
0.1
0.05
0
10^-5
10^-4
Single pulse
10^-3
10^-2
Rectangular pulse duration (seconds)
Note:
t₁
t₂
Duty Factor D = t₁/t₂
Peak T_J = P_DM x Z_θJC + T_C
10^-1
1
Fig.2 Forward current vs. forward voltage
200
180
160
TJ = 175°C
140
120
TJ = 125°C
100
80
TJ = 25°C
60
40
20
0
0
0.5 1
TJ = -55°C
1.5 2 2.5 3 3.5 4 4.5
Anode-to-cathode voltage-V_F (V)
Fig.4 Reverse recovery charge vs. current
rate of change
7000
6000
TJ = 125°C
VR = 800V
120A
5000
60A
4000
30A
3000
2000
1000
0
0
200 400 600 800 1000 1200
Current rate of change-di_F/dt(A/µs)
Fig3. Reverse recovery time vs. current rate
of change
500
TJ = 125°C
VR = 800V
400
300
120A
200
60A
30A
100
0
0
200 400 600 800 1000 1200
Current rate of change-di_F/dt(A/µs)
Fig.5 Reverse recovery current vs. current
rate of change
40
TJ = 125°C
35 ^{VR = 800V}
120A
60A
30A
30
25
20
15
10
5
0
0
200 400 600 800 1000 1200
Current rate of change-di_F/dt(A/µs)
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