30ETU06 Datasheet, PDF (3/6 Pages) Nell Semiconductor Co., Ltd – Ultrafast recovery

SEMICONDUCTOR
Fig.1 Typical forward voltage drop characteristics
1000
100
10
T_J=175°
T_J=125°
TJ=25°
1
0 0.5 1 1.5 2 2.5 3 3.5
Forward voltage drop, V_F (V)
Fig.3 Typical junction capacitance vs. reverse voltage
1000
100
T_J=25°
10
0 100 200 300 400 500 600
Reverse voltage, V_R (V)
30ETU06 RRooHHSS
Nell High Power Products
Fig.2 Typical values of reverse current vs.
reverse voltage
1000
100
10
1
0.1
0.01
0.001
0.0001
0
T_J=175°
TJ=150°
T_J=125°
TJ=100°
T_J=25°
100 200 300 400 500 600
Reverse voltage, V_R (V)
Fig.4 Junction capacitance vs. reverse voltage
200
180
160
140
120
100
80
60
40
20
0
1
10
100 200
Reverse voltage, V_R (V)
Fig.5 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.90
0.80
0.70
D = 0.9
0.60
0.7
0.50
0.5
0.40
0.30
0.3
0.20
0.10
0.1
SINGLE PULSE
0.05
0
10^-5
10^-4
10^-3
10^-2
Note:
t₁
t₂
Duty Factor D = t₁/t₂
Peak T_J = P_DM x Z_θJC + T_C
10^-1
1.0
Rectangular pulse duration (seconds)
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