2SC2625B Datasheet, PDF (3/3 Pages) Nell Semiconductor Co., Ltd – Silicon NPN triple diffusion planar transistor

SEMICONDUCTOR
Fig.1 Collector output characteristics
14
TC = 25°C
12
900mA
10
700mA
8
500mA
6
300mA
200mA
4
l_B = 100mA
2
0
0
2
4
6
8 10 12 14
Collector emitter voltage, V_CE (V)
Fig.3 Switching time
3
TC = 25°C
lC = 5lB=5lB2
t_STG
1
0.5
tON
0.3
t_F
0.1
0.3 0.5
1
35
10
Collector current, I_C(A)
2SC2625B RRooHHSS
Nell High Power Products
Fig.2 Base and collector saturation voltage
3
1
0.5
0.3
V _BE(sat)
T_C = 25°C
l_C = 5l_B
0.05
V CE(sat)
0.01
0.03 0.05 0.1
0.3 0.5
1 3 5 10
Collector Current l_C (A)
Fig.4 DC Current gain
300
200
100
50
T_C = 120°C
30
25°C
-20°C
10
-40°C
5
3
V_CE = 5V
1
0.03 0.05 0.1
0.3 0.5
1 3 5 10
Collector current, l_C (A)
Fig.5 Safe operating area
30
T_C = 25°C
10 _{Single Pulse}
5
3
1
0.5
0.3
50µs
100µs
200µs
500µs
Pw = 1ms
0.1
0.05
0.03
1
3 5 10 30 50 100 300 500
Collector-Emitter Voltage, V_CE (V)
www.nellsemi.com
Page 3 of 3