N-HFA16TB120 Datasheet, PDF (2/6 Pages) Nell Semiconductor Co., Ltd – FRED Ultrafast Soft Recovery Diode, 16 A

SEMICONDUCTOR
N-HFA16TB120 RRooHHSS
Nell High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Cathode to anode
breakdown voltage
V_BR
Maximum forward voltage
V_FM
Maximum reverse
I_RM
leakage current
Junction capacitance
C_T
Series inductance
L_S
(T_J = 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
I_R = 100 µA
1200
I_F = 16 A
-
I_F = 32 A
-
I_F = 16 A, T_J = 125 ºC
-
V_R = V_R rated
-
T_J = 125°C, V_R = V_R rated
-
V_R = 200V
-
Measured lead to lead 5 mm from package body
-
TYP.
-
2.5
3.0
2.3
0.75
375
27
8.0
MAX. UNITS
-
3.0
V
3.5
2.8
20
µA
2000
40
pF
-
nH
DYNAMIC RECOVERY CHARACTERISTICS PERLEG (T_J = 25 ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP. MAX.
Reverse recovery time
I_F = 0.5A, I_R = 1.0A, I_RR = 250mA (RG#1 CKT)
-
t_rr
I_F = 1.0 A, dI_F/dt = -200 A/µs, V_R =30 V, T_J = 25°C
-
t_rr1
T_J = 25 ºC
-
28
35
30
-
90
135
Peak recovery current
Reverse recovery charge
t_rr2
I_RRM1
I_RRM2
Q_rr1
Q_rr2
T_J = 125 ºC
T_J = 25 ºC
T_J = 125 ºC
T_J = 25 ºC
T_J = 125 ºC
-
164
245
-
5.8
10
I_F= 16A
-
8.3
15
dI_F/dt = -200 A/µs
V_R = 200 V
-
260
675
-
680
1838
Peak rate of fall of recovery
current during t_b
dl_(rec)M/dt1 T_J = 25 ºC
dl_(rec)M/dt2 T_J = 125 ºC
-
120
-
-
76
-
UNITS
ns
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
T_lead
R_thJC
R_thJA
R_thCS
0.063" from case (1.6 mm) for 10 s
Typical socket mount
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style TO-220AC
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
0.83
UNITS
ºC
-
80
K/W
0.50
-
2.0
-
0.07
-
12
-
(10)
HFA16TB120
g
oz.
kgf ^. cm
(lbf ^. in)
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