MBR2045CT Datasheet, PDF (2/6 Pages) ON Semiconductor – SWITCHMODE Power Rectifier

SEMICONDUCTOR
MBR2045CT / MBR2060CT Series RRooHHSS
Nell Semiconductors
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
MBR2045CT
45
MBR2060CT
60
UNIT
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUE UNIT
Maximum average
forward current
per device
per diode
l_F(AV)
T_C = 135°C, rated V_R
20
A
10
Non-repetitive peak surge current
Following any rated load
5 μs sine or 3 μs rect.pulse condition and with rated 1060
l_FSM
V_RRM applied
A
Surge applied at rated load condition half wave
150
single phase 60 Hz
Non-repetitive avalanche energy
Repetitive avalanche current
E_AS T_J = 25°C, l_AS = 2.0A, L = 4mH
8
mJ
Current decaying linearly to zero in 1 μs
l_AR
Frequency limited by T_J maximum V_A = 1.5 x V_R typical ²
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUE
UNIT
MBR2045CT MBR2060CT
Maximum forward voltage drop
V
(1)
FM
I_F = 10A
I_F = 20A
I_F = 10A
I_F = 20A
T_J = 25°C
T_J = 125°C
0.65
0.84
0.57
0.72
0.8
0.95
V
0.7
0.85
T_J = 25°C
0.1
Maximum instantaneous reverse current
l
(1)
RM
Rated DC voltage
T_J = 125°C
15
1
mA
150
Maximum junction capacitance
C_T
V_R = 5 V_DC (test signal range
100 kHz to 1 MHZ) 25°C
600
600
pF
Typical series inductance
Maximum voltage rate of change
Isolation voltage (ITO-220AB only)
from terminal to heatsink, t = 1 min
Note
(1) Pulse width < 300 µs, duty cycle < 2%
Measured from top of terminal to
L_S
mounting plane
dV/dt Rated VR
V_ISO
8
10000
1500
nH
V/µs
V
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