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| IRF260 Datasheet, PDF (2/7 Pages) Nell Semiconductor Co., Ltd – N-Channel Power MOSFET | |||
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SEMICONDUCTOR
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(c-s)
Thermal resistance, case to heat sink
Rth(j-a)
Thermal resistance, junction to ambient
IRF260 Series RRooHHSS
Nell High Power Products
MIN.
TYP.
0.24
MAX. UNIT
0.45
ºC/W
40
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNIT
STATIC
V(BR)DSS
Drain to source breakdown voltage
ID = 250μA, VGS = 0V
200
â² â² V(BR)DSS/ TJ Breakdown voltage temperature coefficient ID = 1mA, VDS =VGS
IDSS
Drain to source leakage current
VDS=200V, VGS=0V
VDS=160V, VGS=0V
TC = 25°C
TC=125°C
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
RDS(ON)
Static drain to source on-state resistance ID = 28A, VGS = 10V
VGS(TH)
Gate threshold voltage
VGS=VDS, ID=250μA
2.0
gfs
Forward transconductance
VDS = 50V, lD = 28A
24
V
0.24
25.0
250
V/ºC
μA
100
nA
-100
0.055 Ω
4.0 V
S
DYNAMIC
CISS
COSS
Input capacitance
Output capacitance
VDS = 25V, VGS = 0V, f =1MHz
5200
1200
pF
CRSS
td(ON)
tr
td(OFF)
tf
QG
QGS
QGD
LD
LS
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
Internal drain inductance
Internal source inductance
VDD = 100V, VGS = 10V
ID = 50A, RG = 4.3Ω, RD = 2.1Ω
(Note1,2)
VDD = 160V, VGS = 10V
ID = 50A, (Note1,2)
Between lead, 6mm(0.25â) form
package and center of die contact
310
23
120
ns
100
94
230
42 nC
110
5
nH
13
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNIT
VSD
Diode forward voltage
ISD = 50A, VGS = 0V
1.8 V
Is (IsD)
Continuous source to drain current
Integral reverse P-N junction
50
diode in the MOSFET
D (Drain)
ISM
Pulsed source current
G
(Gate)
A
200
S (Source)
trr
Reverse recovery time
Qrr
Reverse recovery charge
ISD = 50A, VGS = 0V,
dIF/dt = 100A/µs
390 590 ns
4.8 7.2 μC
Note: 1. Pulse test: Pulse width ⤠300µs, duty cycle ⤠2%.
2. Essentially independent of operating temperature.
www.nellsemi.com
Page 2 of 7
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