GBU20 Datasheet, PDF (2/3 Pages) Nell Semiconductor Co., Ltd – Glass Passivated Single-Phase Bridge Rectifier, 20A

SEMICONDUCTOR
GBU20 Series RRooHHSS
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (T_A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
D
GBU20
G
J
K
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
V_RRM
V_RSM
200 400 600 800
300 500 700 900
Maximum DC blocking voltage
Maximum average forward rectified output current, T_c = 85°C
V_DC
I_F(AV)
200 400 600 800
20
Peak forward surge current single sine-wave superimposed on
I_FSM
300
rated load
UNIT
M
1000 V
1100 _V
1000 V
A
A
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
Storage temperature range
I²t
V_ISO
T_J
T_STG
374
A²s
2500
V
-40 to 150
ºC
-40 to 150
ºC
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
PARAMETER
TEST
SYMBOL
CONDITIONS
D
Maximum instantaneous forward drop per diode
I_F = 10A
V_F
Maximum reverse DC current at rated DC blocking
T_A = 25°C
voltage per diod
I_R
T_A = 150°C
GBU20
G
J
K
1.10
5
500
UNIT
M
V
µA
THERMAL AND MECHANICAL (T_A = 25°C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
D
Typical thermal resistance
junction to case
Mounting
torque
± 10 %
to heatsink M3
Single-side heat dissipation, sine
half wave
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
R_θJC⁽¹⁾
Approximate weight
GBU20
G
J
K
1.5
0.8
4.0
UNIT
M
°C/W
N.m
g
Notes
(1) With heatsink, single side heat dissipation, half sine wave.
Ordering Information Tabel
Device code GBU 20 K
1
2
3
1 - Product type : “GBU” Package,1Ø Bridge
2 - I_F(AV) rating : "20" for 20A
3 - Voltage code : D = 200V
G = 400V
J = 600V
K = 800V
M = 1000V
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