GBPC25M Datasheet, PDF (2/4 Pages) Nell Semiconductor Co., Ltd – Glass Passivated Single-Phase Bridge Rectifier, 25A

SEMICONDUCTOR
GBPC25M RRooHHSS
Nell High Power Products
PRIMARY CHARACTERRISTICS
I_F(AV)
25A
V_RRM
600V to 1200V
I_FSM
310A
I_R
5 µA
V_F
1.1V
T_{J max.}
150ºC
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
06
Maximum repetitive peak reverse voltage
V_RRM
600
Maximum RMS voltage
V_RMS
420
Maximum DC blocking voltage
V_DC
600
Maximum average forward rectified output current (Fig.1), T_C=85°C ^IF(AV)
Peak forward surge current single sine-wave superimposed on
rated load
I_FSM
Rating (non-repetitive, for t greater than 1 ms and less than 10 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
I²t
V_ISO
T_J,T_STG
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
PARAMETER
TEST
SYMBOL
CONDITIONS
06
Maximum instantaneous forward drop per diode
I_F = 12.5A
V_F
Maximum reverse DC current at rated DC blocking
T_A = 25°C
voltage per diode
I_R
T_A = 150°C
Typical junction capacitance per diode
4V, 1MHz
C_J
THERMAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
06
Typical thermal resistance
R_θJC⁽¹⁾
GBPC25..M
08
10
800
1000
560
700
800
1000
25
350
12
1200
840
1200
UNIT
V
V
V
A
A
613
A²s
2500
V
-55 to 150
ºC
GBPC25..M
08
10
1.1
5
500
300
UNIT
12
V
µA
pF
GBPC25..M
08
10
0.8
UNIT
12
°C/W
Notes
(1) With heatsink
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with
M5 screw
www.nellsemi.com
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