GBJ35H Datasheet, PDF (2/3 Pages) Nell Semiconductor Co., Ltd – Glass Passivated Single-Phase Bridge Rectifier, 35A

SEMICONDUCTOR
GBJ35H Series RRooHHSS
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (T_A = 25°C unless otherwise noted)
PARAMETER
SYMBOL
04
GBJ35..H
06
08
10
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
V_RRM
V_RSM
400 600 800 1000
500 700 900 1100
Maximum DC blocking voltage
Maximum average forward rectified output current, T_c = 85°C
V_DC
I_F(AV)
400 600 800 1000
35
Peak forward surge current single sine-wave superimposed on
I_FSM
400
rated load
UNIT
12
1200 V
1300 _V
1200 V
A
A
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
Storage temperature range
I²t
V_ISO
T_J
T_STG
664
A²s
2500
V
-40 to 150
ºC
-40 to 150
ºC
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
PARAMETER
TEST
SYMBOL
CONDITIONS
04
Maximum instantaneous forward drop per diode
I_F = 17.5A
V_F
Maximum reverse DC current at rated DC blocking
T_A = 25°C
I_R
voltage per diod
T_A = 150°C
GBJ35..H
06
08
10
1.10
5
500
UNIT
12
V
µA
THERMAL AND MECHANICAL (T_A = 25°C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
04
Typical thermal resistance
junction to case
Mounting
torque
± 10 %
to heatsink M3
Single-side heat dissipation, sine
half wave
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
R
θJ
(1)
C
Approximate weight
GBJ35..H
06
08
10
0.80
0.8
6.7
UNIT
12
°C/W
N.m
g
Notes
(1) With heatsink, single side heat dissipation, half sine wave.
Ordering Information Tabel
Device code
GBJ
35 10 H
1
2
3
4
1 - Product type : “GBJ” Package,1Ø Bridge
2 - I_F(AV) rating : "35" for 35A
3 - Voltage code : code x 100 = V_RRM
4 - H: With Aluminum base plate (heatsink)
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