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D4535D Datasheet, PDF (2/5 Pages) Nell Semiconductor Co., Ltd – Voltage ratings: 200V to 600V
SEMICONDUCTOR
D4535D Series RRooHHSS
Nell High Power Products
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNIT
Maximum average forward current
at heatsink temperature
IF(AV) 180° conduction, half sine wave
Double side (single side) cooled
4535(2300) A
55(85)
ºC
Maximum RMS forward current
IF(RMS) 25°C heatsink temperature double side cooled
8200
A
Maximum peak, one cycle
non-reptitive surge current
Maximum l²t for fusing
IFSM
I2t
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100%VRRM
reapplied
No voltage
reapplied
100%VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
44000
46070
36960
38700
9680
8808
6830
6215
A
kA2s
Maximum l²√t for fusing
I2√t
t = 0.1 to 10 ms, no voltage reapplied
96800 kA2√s
Maximum value of threshold voltage
Maximum value of forward slope resistance
VF(TO)
rt
lFM =13630A,TJ =TJ maximum
0.770
V
0.055 mΩ
Maximum forward voltage drop
lpk = 6400A
VFM
TJ =TJ maximum
lpk = 13630A
1.10
V
1.40
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating temperature range
TJ
Maximum storage temperature range
Tstg
Maximum thermal resistance, junction to heatsink
RthJ-hs
TEST CONDITIONS
DC operation single side cooled
DC operation double side cooled
VALUES
-40 to 190
-55 to 200
0.044
0.022
UNIT
ºC
K/W
Mounting force, ±10%
22250
N
(2250)
(kg)
Approximate weight
Case style
425
g
TO-200AC (K-PUK), Nell’s D-type Capsule
RthJC CONDUCTION
SINUSOIDAL CONDUCTION
CONDUCTION ANGEL
SINGLE SIDE DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
TEST CONDUCTIONS
180°
120°
90°
60°
30°
0.002
0.002
0.003
0.004
0.007
0.002
0.002
0.003
0.004
0.007
0.001
0.002
0.003
0.004
0.007
0.001
0.002
0.003
0.004
0.007
TJ = TJ maximum
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
UNITS
K/W
www.nellsemi.com
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