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D1270B Datasheet, PDF (2/5 Pages) Nell Semiconductor Co., Ltd – Standard Recovery Diodes
SEMICONDUCTOR
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
Maximum peak, one cycle
non-reptitive surge current
Maximum l²t for fusing
Maximum l²√t for fusing
Maximum value of threshold voltage
D1270B Series RRooHHSS
Nell High Power Products
SYMBOL
TEST CONDITIONS
VALUES UNIT
IF(AV) 180° conduction, half sine wave
Double side (single side) cooled
1270 (720) A
55 (85) ºC
IF(RMS) 25°C heatsink temperature double side cooled
2290
A
IFSM
I2t
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100%VRRM
reapplied
Sinusoidal half wave,
No voltage initial TJ = TJ maximum
reapplied
100%VRRM
reapplied
11700
12250
9830
10290
684
623
483
439
A
kA2s
I2√t t = 0.1 to 10 ms, no voltage reapplied
6845 kA2√s
VF(TO) lPK = 3770A, TJ =TJ maximum
0.87
V
Maximum value of forward slope resistance
Maximum forward voltage drop
rt
lPK = 3770A, TJ =TJ maximum
lpk = 3770A,TJ =TJ maximum,
VFM tp = 10 ms sinusoidal wave
0.33
mΩ
2.12
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating temperature range
TJ
TEST CONDITIONS
Maximum storage temperature range
Tstg
Maximum thermal resistance, junction to heatsink
RthJ-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ±10%
Approximate weight
VALUES
-40 to 175
-40 to 200
UNIT
ºC
0.10
0.05
9800
(1000)
K/W
N
(kg)
83
g
Case style
B-43 (E-PUK), Nell’s B-type Capsule
RthJC CONDUCTION
SINUSOIDAL CONDUCTION
CONDUCTION ANGEL
SINGLE SIDE DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
TEST CONDUCTIONS
180°
0.007
0.007
0.005
0.005
120°
0.008
0.008
0.008
0.008
90°
0.010
0.010
0.011
0.011
TJ = TJ maximum
60°
0.015
0.015
0.016
0.016
30°
0.026
0.026
0.026
0.026
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
UNITS
K/W
www.nellsemi.com
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