D1070C Datasheet, PDF (2/7 Pages) Nell Semiconductor Co., Ltd – Standard Recovery Diodes

SEMICONDUCTOR
D1070C Series RRooHHSS
Nell High Power Products
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
D1070C
36 to 45 50 to 60
UNIT
Maximum average forward current
at heatsink temperature
I_F(AV) ^{180° conduction, half sine wave}
Double side (single side) cooled
1070 (550) 1030 (520) A
55 (85) 55 (85) ºC
Maximum RMS forward current
I_F(RMS) 25°C heatsink temperature double side cooled
2040
1910
A
Maximum peak, one cycle
non-reptitive surge current
Maximum l²t for fusing
I_FSM
I²t
t = 10ms _{No voltage}
t = 8.3ms ^reapplied
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
100%V_RRM
reapplied
Sinusoidal half wave,
No voltage ^{initial TJ = TJ maximum}
reapplied
t = 10ms _100%VRRM
reapplied
t = 8.3ms
12000
12560
10080
10550
720
655
508
462
7200
7530
6050
6325
259
235
183
166
A
kA²s
Maximum l²√t for fusing
I²âˆšt ^{t = 0.1 to 10 ms, no voltage reapplied}
7200
2592 kA²âˆšs
Low level value of threshold
voltage
V_F(TO)1 ^{(16.7% x π x lF(AV) < I < π x lF(AV))}
T_J =T_J maximum
0.9
1.10
High level value of threshold
voltage
V_F(TO)2 (I > π x l_F(AV)),T_J =T_J maximum
1.2
1.35
V
Low level value of forward slope
resistance
r_t1
(16.7% x π x l_F(AV) < I < π x l_F(AV))
T_J =T_J maximum
0.45
0.58
High level value of forward slope
resistance
r_t2
(I > π x l_F(AV)),T_J =T_J maximum
0.34
0.46
mΩ
Maximum forward voltage drop
V_FM
l_pk = 2000A,T_J =T_J maximum_,
t_p = 10 ms sinusoidal wave
1.95
2.55
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating temperature range
T_J
Maximum storage temperature range
T_stg
Maximum thermal resistance, junction to heatsink
R_thJ-hs
Mounting force, ±10%
Approximate weight
Case style
TEST CONDITIONS
VALUES
-40 to 150
DC operation single side cooled
DC operation double side cooled
-55 to 200
0.073
0.031
14700
(1500)
250
DO-200AB (B-PUK), Nell’s C-type Capsule
UNIT
ºC
K/W
N
(kg)
g
RthJC CONDUCTION
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
CONDUCTION ANGEL
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
TEST CONDUCTIONS
180°
120°
90°
60°
30°
0.009
0.011
0.014
0.020
0.036
0.009
0.011
0.014
0.020
0.036
0.006
0.011
0.015
0.021
0.036
0.006
0.011
0.015
0.021
0.036
T_J = T_J maximum
Note
• The table above shows the increment of thermal resistance R_thJ-hs when devices operate at different conduction angles than DC
www.nellsemi.com
Page 2 of 7
UNITS
K/W