8PT_14 Datasheet, PDF (2/7 Pages) Nell Semiconductor Co., Ltd – Sensitive and Standard SCRs, 8A

SEMICONDUCTOR
8PT Series _RRooHHSS
STANDARD ELECTRICAL SPECIFICATIONS
SYMBOL
TEST CONDITIONS
I_GT
V_GT
V_GD
I_H
I_L
dV/dt
V_TM
V_to
R_d
I_DRM
I_RRM
V_D = 12 V, R_L = 30Ω
V_D = V_DRM, R_L = 3.3KΩ
I_T = 100 mA, gate open
I_G = 1.2 I_GT
V_D = 67% V_DRM, gate open
I_TM = 16A, t_P = 380 µs
Threshold voltage
Dynamic resistance
V_DRM = V_RRM
(T_J = 25 ºC, unless otherwise specified)
8PTxxxx
Min.
Max.
Max.
T
-
0.5
2
5
15
1.3
T_j = 125°C
Min.
Max.
0.2
25
30
Max.
30
70
T_j = 125°C
T_j = 25°C
Min.
Max.
50
150
1.6
T_j = 125°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
Max.
Max.
Max.
0.85
46
5
1
SENSITIVE ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITIONS
I_GT
V_GT
V_GD
V_RG
I_H
I_L
dV/dt
V_TM
V_to
R_d
I_DRM
I_RRM
V_D = 12 V, R_L = 140Ω
V_D = V_DRM, R_L = 3.3KΩ, R_GK=220Ω
I_RG = 10 µA
I_T = 50 mA_, R_GK = 1 KΩ
I_G = 1 mA_, R_GK = 1 KΩ
V_D = 67% V_DRM, R_GK = 220Ω
I_TM = 16A, t_P = 380 µs
Threshold voltage
Dynamic resistance
V_DRM = V_RRM, R_GK = 220Ω
(T_{j = 25 ºC, unless otherwise specified)}
8PTxxxx-S
T_j = 125°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
Max.
Max.
Min.
Min.
Max.
Max.
Min.
Max.
Max.
Max.
Max.
200
0.8
0.1
8
5
6
5
1.6
0.85
46
5
1
Unit
mA
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
Unit
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
THERMAL RESISTANCE
SYMBOL
R_th(j-c)
Junction to case (DC)
R_th(j-a)
Junction to ambient (DC)
S=Copper surface under tab
Parameter
IPAK/DPAK/TO-220AB
S = 0.5 cm²
TO-220AB insulated
D-PAK
I-PAK
TO-220AB, TO-220AB insulated
VALUE
1.3
4.6
70
100
60
UNIT
°C/W
°C/W
www.nellsemi.com
Page 2 of 7