70FD Datasheet, PDF (2/6 Pages) Nell Semiconductor Co., Ltd – Short reverse recovery time

SEMICONDUCTOR
70FD(R)Series RRooHHSS
Nell High Power Products
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at maximum case temperature
Maximum RMS forward current
Maximum peak repetitive forward current
Maximum peak, one-cycle
non-reptitive surge current
Maximum l²t for fusing
SYMBOL
TEST CONDITIONS
I_F(AV) 180° conduction, half sine wave
I_F(RMS)
I_FRM
I_FSM
I²t
Sinusoidal half wave, 30° conduction
t = 10ms _{Sinusoidal half wave, 100% VRRM}
t = 8.3ms ^{reapplied, initial T}J ^=TJ ^maximum
t = 10ms _{Sinusoidal half wave, no voltage}
t = 8.3ms ^{reapplied, initial T}J ^=TJ ^maximum
t = 10ms 100% V_RRM reapplied,
t = 8.3ms ^{initial T}J ^=TJ ^maximum
t = 10ms _{no voltage reapplied,}
t = 8.3ms ^{initial T}J ^=TJ ^maximum
Maximum l²√t for fusing⁽¹⁾
I²âˆšt
t = 0.1 ms to 10 ms, no voltage reapplied
Maximum value of threshold voltage
Maximum value of forward slope resistance
Maximum forward voltage drop
V_F(TO)
r_F
V_FM
T_J = 125°C
T_J = 25°C; l_FM = 220A
Note : ⁽¹⁾ l²t for time t_x =I²âˆšt √t_x
70FD(R)
70
85
110
380
700
730
830
870
2450
2212
3445
3141
34445
1.085
3.40
1.85
UNIT
A
ºC
A
A
A
A²s
A²âˆšs
V
mΩ
V
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
Typical reverse recovery time
t_rr
Typical reverse recovered charge
Q_rr
T_J = 25°C, I_F = 0.5A, I_R = 1.0A,
I_RR = 250mA (RG#1 CKT)
T_J = 25°C, I_F = 1A to V_R = 30V,
-dl_F/dt = 100 A/µs
T_J = 25°C, -dl_F/dt = 25 A/µs,
l_FM = π x rated l_F(AV)
T_J = 25°C, I_F = 1A to V_R = 30V,
-dl_F/dt = 100 A/µs
T_J = 25°C, -dl_F/dt = 25 A/µs,
l_FM = π x rated l_F(AV)
70FD(R)
02 to 06 08 to 12
200
500
UNIT
60
150
ns
200
500
90
500
nC
240
1300
www.nellsemi.com
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