5N65 Datasheet, PDF (2/8 Pages) Unisonic Technologies – 5A, 650V N-CHANNEL POWER MOSFET

SEMICONDUCTOR
5N65 Series RRooHHSS
Nell High Power Products
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
V_DSS
V_DGR
V_GS
Drain to Source voltage
Drain to Gate voltage
Gate to Source voltage
T_J=25°C to 150°C
R_GS=20KΩ
I_D
Continous Drain Current
T_C=25°C
T_C=100°C
I_DM
Pulsed Drain current(Note 1)
I_AR
Avalanche current(Note 1)
E_AR
Repetitive avalanche energy(Note 1)
I_AR=5A, R_GS=50Ω, V_GS=10V
E_AS
Single pulse avalanche energy (Note 2)
I_AS=5A, L = 16.8mH
dv/dt
Peak diode recovery dv/dt(Note 3)
TO-251/ TO-252
P_D
Total power dissipation
T_C=25°C TO-220AB
TO-220F
T_J
Operation junction temperature
T_STG
Storage temperature
T_L
Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
VALUE
UNIT
650
650
V
±30
5
3.1
A
20
5
10
mJ
210
4.5
V /ns
54
100
W
36
-55 to 150
-55 to 150
ºC
300
10 (1.1)
lbf.in (N.m)
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.I_AS = 5A, V_DD = 50V, L = 16.8mH, R_GS = 25Ω, starting T_J=25°C.
3.I_SD ≤ 4.5A, di/dt ≤ 200A/µs, V_DD ≤ V_(BR)DSS, starting T_J=25°C.
THERMAL RESISTANCE
SYMBOL
PARAMETER
R_th(j-c)
Thermal resistance, junction to case
R_th(j-a)
Thermal resistance, junction to ambient
TO-251/ TO-252
TO-220AB
TO-220F
TO-251/TO-252
TO-220AB
TO-220F
Min.
Typ.
Max.
2.3
1.25
3.5
160
62.5
62.5
UNIT
ºC/W
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