40FDR06A Datasheet, PDF (2/6 Pages) Nell Semiconductor Co., Ltd – Fast Recovery Diodes (Stud Version), 40A

SEMICONDUCTOR
40FD(R)Series RRooHHSS
Nell High Power Products
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at maximum case temperature
Maximum RMS forward current
Maximum peak repetitive forward current
Maximum peak, one-cycle
non-reptitive surge current
Maximum l²t for fusing
SYMBOL
TEST CONDITIONS
I_F(AV) 180° conduction, half sine wave
I_F(RMS)
I_FRM
I_FSM
I²t
Sinusoidal half wave, 30° conduction
t = 10ms _{Sinusoidal half wave, 100% VRRM}
t = 8.3ms ^{reapplied, initial T}J ^=TJ ^maximum
t = 10ms _{Sinusoidal half wave, no voltage}
t = 8.3ms ^{reapplied, initial T}J ^=TJ ^maximum
t = 10ms 100% V_RRM reapplied,
t = 8.3ms ^{initial T}J ^=TJ ^maximum
t = 10ms _{no voltage reapplied,}
t = 8.3ms ^{initial T}J ^=TJ ^maximum
Maximum l²√t for fusing⁽¹⁾
I²âˆšt
t = 0.1 ms to 10 ms, no voltage reapplied
Maximum value of threshold voltage
Maximum value of forward slope resistance
Maximum forward voltage drop
V_F(TO)
r_F
V_FM
T_J = 125°C
T_J = 25°C; l_FM = 125A
Note : ⁽¹⁾ l²t for time t_x =1²âˆšt √t_x
40FD(R)
40
85
63
220
400
420
475
500
800
732
1128
1038
11281
1.081
6.33
1.95
UNIT
A
ºC
A
A
A
A²s
A²âˆšs
V
mΩ
V
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
Typical reverse recovery time
t_rr
Typical reverse recovered charge
Q_rr
T_J = 25°C, I_F = 1A, I_R = 1.0A,
I_RR = 250mA (RG#1 CKT)
T_J = 25°C, I_F = 1A to V_R = 30V,
-dl_F/dt = 100 A/µs
T_J = 25°C, -dl_F/dt = 25 A/µs,
l_FM = π x rated l_F(AV)
T_J = 25°C, I_F = 1A to V_R = 30V,
-dl_F/dt = 100 A/µs
T_J = 25°C, -dl_F/dt = 25 A/µs,
l_FM = π x rated l_F(AV)
40FD(R)
02 to 06 08 to 12
200
500
UNIT
70
180
ns
200
500
160
750
nC
240
1300
www.nellsemi.com
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