300DR04BM Datasheet, PDF (2/7 Pages) Nell Semiconductor Co., Ltd – Standard Recovery Diodes Stud Version, 300A

SEMICONDUCTOR
300D(R)Series RRooHHSS
Nell High Power Products
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at maximum case temperature
Maximum peak, one cycle forward,
non-reptitive surge current
Maximum l²t for fusing
SYMBOL
I_F(AV)
I_FSM
I²t
TEST CONDITIONS
180° conduction, half sine wave
t = 10ms _{No voltage}
t = 8.3ms reapplied
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
100%VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial T_J = T_J maximum
t = 10ms _100%VRRM
t = 8.3ms ^reapplied
300D(R)
300
130/110
6050
6330
5080
5311
183
166
129
117
Maximum l²√t for fusing
I²âˆšt
t = 0.1 ms to 10 ms, no voltage reapplied
1830
Maximum value of threshold voltage
Maximum value of forward slope resistance
Maximum forward voltage drop
V_F(TO)
r_F
V_FM
T_J = T_J Maximum
l_pk = 942A, T_J = 25°C
0.610
0.751
1.40
UNIT
A
ºC
A
kA²s
kA²âˆšs
V
mΩ
V
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating and
storage temperature range
Maximum thermal resistace,
junction to case
T_J, T_stg
R_thJC DC operation
Maximum thermal resistance
case to heatsink
Maximum allowable mounting torque
(+0% , -20%)
Approximate weight
Case style
R_thCS
Mounting surface, smooth, flat and greased
Not lubricated threads
Lubricated threads
Ceramic housing
Glass-metal seal
(JEDEC) see dimensions -
link at the end of datasheet
300D(R)
04 TO 12 16 TO 20
UNIT
- 40 to175 - 40 to150 ºC
0.18
K/W
0.08
37
Nm
28
228
g
203
DO-205AB (DO-9)
RthJC CONDUCTION
CONDUCTION ANGEL SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDUCTIONS
180°
120°
90°
60°
30°
0.020
0.024
0.031
0.045
0.077
0.015
0.025
0.034
0.047
0.077
T_J = T_J maximum
Note
• The table above shows the increment of thermal resistance R_thJC when devices operate at different conduction angles than DC
UNITS
K/W
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