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| 2SC5027 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING AND AMPLIFIER, COLOR TV HORIZONTAL DRIVER, CHROMA OUTPUT APPLICATIONS) | |||
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SEMICONDUCTOR
2SC5027 Series RRooHHSS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector to base breakdown voltage lC = 1mA, lE = 0
MIN.
850
V(BR)CEO Collector to emitter breakdown voltage lC = 5mA, IB = 0
800
V(BR)EBO Emitter to base breakdown voltage
lE = 1mA, IC = 0
7
ICBO
Collector cutoff current
VCB = 800V, lE = 0
IEBO
Emitter cutoff current
VEB = 5V, lC = 0
VCEX(SUS) Collector to emitter sustaining voltage lC = 1.5A, L = 2mH, lBI = 0.3A,
800
lB2 = -0.3A, clamped
VCE(sat)
Collector to emitter saturation voltage lC = 1.5A, lB = 0.3A
VBE(sat)
fT
Base to emitter saturation voltage
Transition frequency
(Gain-Bandwidth product)
lC = 1.5A, lB = 0.3A
VCE = 10V, lC = 0.2A
Cob
Output capacitance
VCB = 10V, f= 1MHz, lE = 0
ton
Turn-on time
tstg
Storage time
tf
Fall time
lC = 2A, lB1 = 0.4A, lB2 = -0.8A
VCC = 400V, RL = 200Ω
Rank-N
10
hFE1
DC current gain
VCE = 5V, IC = 0.2A Rank-R
15
Rank-O 20
hFE2
VCE = 5V, IC = 1A
10
VALUE
TYP.
15
60
MAX.
10
10
2
1.5
0.5
3.0
0.3
20
30
40
UNIT
V
µA
V
V
MHz
pF
µs
ORDERING INFORMATION SCHEME
2SC 5027 A - R
Transistor series
NPN Type
Current & Voltage rating, IC & VCEO
3A / 800V
Package type
A = TO-220AB
AF = TO-220F
DC current gain rank, hFE1
N = 10 ~ 20
R = 15 ~ 30
O = 20 ~ 40
www.nellsemi.com
Page 2 of 5
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