12T06A-BW Datasheet, PDF (2/6 Pages) Nell Semiconductor Co., Ltd – TRIACs, 12A Snubberless, Logic Level and Standard

SEMICONDUCTOR
12T Series RRooHHSS
ELECTRICAL CHARACTERISTICS (T_J= 25 ºC unless otherwise specified)
SNUBBERLESS and Logic level (3 quadrants)
SYMBOL
TEST CONDITIONS
QUADRANT
12Txxxx
TW SW
CW
I_GT(1)
V_GT
V_D = 12 V, R_L = 30Ω
I - II - III
I - II - III
MAX.
MAX.
05
10
35
1.3
V_GD
I_H(2)
I_L
dV/dt⁽²⁾
V_D = V_DRM, R_L = 3.3KΩ
T_j = 125°C
I_T = 500 mA
I_G = 1.2 I_GT
I - II - III
I - III
II
V_D = 67% V_DRM, gate open ,T_j = 125°C
MIN.
MAX.
MAX.
MIN.
0.2
10
15
40
15
20
50
25
35
60
20
40
500
(dI/dt)c⁽²⁾
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs
T_j = 125°C
3.5
6.5
-
T_j = 125°C
MIN.
1
2.9
-
Without snubber
T_j = 125°C
-
-
6.5
Unit
BW
50
mA
V
V
60
70
80
1000
-
-
12
mA
mA
V/µs
A/ms
ELECTRICAL CHARACTERISTICS (T_J= 25 ºC unless otherwise specified)
Standard (4 quadrants)
SYMBOL
TEST CONDITIONS
I_GT(1)
V_GT
V_GD
I_H(2)
V_D = 12 V, R_L = 30Ω
V_D = V_DRM, R_L = 3.3KΩ, T_j = 125°C
I_T = 500 mA
QUADRANT
I - II - III
IV
ALL
ALL
MAX.
MAX.
12Txxxx
C
B
25
50
50
100
1.3
0.2
25
50
I_L
I_G = 1.2 I_GT
dV/d_t(2)
(dV/dt)c⁽²⁾
V_D = 67% V_DRM, gate open, T_j = 125°C
(dI/dt)c = 5.3 A/ms, T_j = 125°C
I - III - IV
II
40
50
MAX.
80
80
MIN.
200
400
MIN.
5
10
UNIT
mA
V
V
mA
mA
V/µs
V/µs
STATIC CHARACTERISTICS
SYMBOL
V_TM(2)
I_TM = 17 A, t_P = 380 µs
V_t0(2)
Threshold voltage
R_d⁽²⁾
Dynamic resistance
I_DRM
I_RRM
V_D = V_DRM
V_R = V_RRM
TEST CONDITIONS
T_j = 25°C
T_j = 125°C
T_j = 125°C
T_j = 25°C
T_j = 125°C
Note 1: Minimum l_GT is guaranted at 5% of l_GT max.
Note 2: For both polarities of A2 referenced to A1.
MAX.
MAX.
MAX.
MAX.
VALUE
1.55
0.85
35
5
1
UNIT
V
V
mΩ
µA
mA
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