TTA1943 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Power Amplifier Applications

SEMICONDUCTOR
TTA1943 RRooHHSS
Nell High Power Products
Silicon PNP triple diffusion planar transistor
-15A/-230V/150W
20.00±0.20
18.00
ø3.30±0.20
5.00
3.00
TO-3PL
FEATURES
High-speed switching
High collector-emitter voltage: V_CEO = -230V(min)
Complementary to TTC5200
TO-3PL package which can be installed to the heat sink
with one screw
APPLICATIONS
Power amplifier
Recommended for 100W high-fidelity audio frequency
amplifier output stage
2.50
(typ.)
3.00
5.45±0.05
1.00
(typ.)
5.45±0.05
1 23
0.60
3.20
1. BASE
2. COLLECTOR (HEAT SINK)
B
3. EMITTER
(1)
All dimensions in millimeters
C (2)
PNP
E(3)
ABSOLUTE MAXIMUM RATINGS (T_a = 25°C)
SYMBOL
PARAMETER
V_CBO
Collector to base voltage
V_CEO
V_EBO
Collector to emitter voltage
Emitter to base voltage
I_C
Collector current
I_CP
Peak collector current, tp ≤ 5ms
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
T_C= 25°C
VALUE
-230
-230
-5
-15
-30
-1.5
150
150
-55 to 150
UNIT
V
A
W
ºC
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