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| MJE13005A Datasheet, PDF (1/6 Pages) Nell Semiconductor Co., Ltd – Switchmode Series NPN Silicon Power Transistors (4A / 400V / 75W) | |||
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SEMICONDUCTOR
MJE13005A(NPN) RRooHHSS
Nell High Power Products
Switchmode Series NPN Silicon Power Transistors
(4A / 400V / 75W)
FEATURES
VCEO(SUS) ⥠400V @ lC = 10 mA, lB = 0
VCE(sat) = 1.0V (Max.) @ lC = 4 A, lB = 1 A
Switching time - tf = 0.9 µs (Max.) @ lC = 2 A
700V blocking capability
DESCRIPTION
These devices are designed for high-voltage,
high-speed power switching inductive circuits
where fall time is critical. They are particularly
suited for 115 and 220V SWITCHMODE
applications such as switching regulators,
inverters, motor controls, solenoid/relay drivers
and deflection circuits.
1
2
3
TO-220AB
(MJE13005A)
INTERNAL SCHEMATIC DIAGRAM
C (TAB)
(1)
B
(2)
E
(NPN)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
VCEV
Collector to base voltage (VBE = 0)
VCEO
Collector to emitter voltage (IB = 0)
VEBO
Emitter to base voltage
IC
Collector current - continuous
ICM
Peak collector current (Note 1)
IB
Base current - continuous
IBM
Peak base current (Note 1)
IE
Emitter current - continuous
IEM
Peak emitter current (Note 1)
Total power dissipation
PD
Derate above 25ºC
TC= 25°C
Tj
Junction temperature
Tstg
Storage temperature
Maximum lead temperature for soldering purposes:
TL
1/16â from case for ⤠10 seconds
Note: 1. Pulse test : Pulse width = 5ms, duty cycle ⤠10%
VALUE
700
400
9
4
8
2
4
6
12
75
0.6
150
-65 to 150
265
UNIT
V
A
W
W/ºC
ºC
ºC
www.nellsemi.com
Page 1 of 6
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