MJ15003 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(20A,140V,250W)

SEMICONDUCTOR
MJ15003(NPN)
MJ15004(PNP) ^RRooHHSS
Nell High Power Products
Complementary Silicon power transistors
(20A / 140V / 250W)
TAB
26.00 Max.
10.90
13.10 Max. 8.60
1.60
1
2
TO-3
1
2
FEATURES
Designed for general-purpose switching and amplifier
applications.
DC current gain-h_FE = 25 (Min) @ l_C = 5 Adc
High safe operation area (100% tested) 250W @ 50V
For low distortion complementary designs
DESCRIPTION
The MJ15003 is a silicon epitaxial-base planar
NPN transistor mounted in JEDEC TO-3 metal
case.
lt is designed for high power audio, disk head
positioners and other linear applications.
The complementary PNP type is MJ15004.
2-Φ4.0 Thru.
All dimensions in millimeters
INTERNAL SCHEMATIC DIAGRAM
C (TAB)
(1)
B
(2)
E
MJ15003(NPN)
C (TAB)
(1)
B
(2)
E
MJ15004(PNP)
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
V_CBO
Collector to base voltage (I_E = 0)
V_CEO
Collector to emitter voltage (I_B = 0)
V_EBO
Emitter to base voltage
I_C
Collector current - continuous
I_B
Base current - continuous
I_E
Emitter current - continuous
Total power dissipation
P_D
Derate above 25ºC
T_C= 25°C
T_j
Junction temperature
T_stg
Storage temperature
Maximum lead temperature for soldering purposes :
T_L
1/16” from case for ≤ 10 seconds
*For PNP types voltage and current values are negative.
THERMAL CHARACTERISTICS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
R_th(j-c)
Thermal resistance, junction to case
VALUE
140
140
5
20
5
25
250
1.43
200
-65 to 200
265
VALUE
0.7
UNIT
V_dc
A_dc
W
W/ºC
ºC
ºC
UNIT
ºC/W
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