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MBR745 Datasheet, PDF (1/5 Pages) Inchange Semiconductor Company Limited – Schottky Barrier Rectifier
SEMICONDUCTOR
MBR745 Series RRooHHSS
Nell Semiconductors
Schottky Rectifier, 7.5 A
Available
RoHS*
COMPLIANT
FEATURES
150°C TJ operation
High frequency operation
Low forward voltage drop
High purity, high temperature epoxy encapsulation
for enhanced mechanical strength and moisture
resistance
Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS
Designed and qualified according to JEDEC-JESD47
DESCRIPTION
The MBR745 Schottky rectifier has been optimized
for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable
operation up to 150°C junction temperature.
APPLICATIONS
Switching mode power supplies
Converters
Freewheeling diodes
Reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
lF(AV)
Rectangular waveform
VRRM
lFSM
tp = 5 μs sine
VF
7.5 Apk, TJ = 125°C
TJ
Range
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
Base
cathode
2
1
3
Cathode Anode
TO-220AC
PRODUCT SUMMARY
Package
lF(AV)
VR
VF at lF
lRM max.
TJ max.
Diode variation
EAS
TO-220AC
7.5A
45V
0.57V
15mA at 125°C
150°C
Single die
7 mJ
VALUE
7.5
45
690
0.57
-65 to 150
UNIT
A
V
A
V
°C
MBR745
45
UNIT
V
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