MBR1045 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Schottky Rectifier, 10 A

SEMICONDUCTOR
MBR1045 Series RRooHHSS
Nell Semiconductors
Schottky Rectifier, 10 A
Available
RoHS*
COMPLIANT
FEATURES
150°C T_J operation
High frequency operation
Low forward voltage drop
High purity, high temperature epoxy encapsulation
for enhanced mechanical strength and moisture
resistance
Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS
Designed and qualified according to JEDEC-JESD47
DESCRIPTION
The MBR1045 Schottky rectifier has been optimized
for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable
operation up to 150°C junction temperature.
APPLICATIONS
Switching mode power supplies
Converters
Freewheeling diodes
Reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
l_F(AV)
Rectangular waveform
l_FRM
T_J = 135°C
V_RRM
l_FSM
t_p = 5 μs sine
V_F
10 A_pk, T_J = 125°C
T_J
Range
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
Base
cathode
2
1
3
Cathode Anode
TO-220AC
PRODUCT SUMMARY
Package
l_F(AV)
V_R
V_F at l_F
l_RM max_.
T_J max.
Diode variation
E_AS
TO-220AC
10A
45V
0.57V
15mA at 125°C
150°C
Single die
8 mJ
VALUE
10
20
45
1060
0.57
-65 to 150
UNIT
A
A
V
A
V
°C
MBR1045
45
UNIT
V
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