MBR10100CT Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – 10 Amp HT Power Schottky Barrier Rectifier 100 Volts to 200Volts

SEMICONDUCTOR
MBR10100CT Series RRooHHSS
Nell Semiconductors
Dual Common Cathode High-Voltage Schottky Rectifier
10A/100V (5Ax2)
FEATURES
150°C T_J operation
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Guard ring for enhanced ruggedness,
long term reliability and overvoltage protection
Solder bath temperature 260°C maximum,
40s, per JESD 22-B106 (for TO-220AC and
lTO-220AC package)
Compliant to RoHS
TYPICAL APPLICATIONS
Switching mode power supply
DC-to-DC converters
Freewheeling diodes
Polarity protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-O
flammability rating
Terminals: Mat tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERRISTICS
I_F(AV)
5A x 2
V_RRM
100V
I_FSM
120A
V_F
0.75V
T_{J max.}
150ºC
CASE
PIN 2
1
2
3
TO-220AB (MBR10100CT)
PIN 1 PIN 3
PIN 2
1
2
3
ITO-220AB (MBRF10100CT)
K
1
2
TO-263AB (MBRH10100CT)
PIN 1 PIN 3
HEATSINK
K
PIN 1 PIN 2
Available
RoHS*
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS (T_C = 25°C unless otherwise noted)
PARAMETER
SYMBOL VALUE
Maximum repetitive peak reverse voltage
V_RRM
100
Working peak reverse voltage
V_RWM
100
Maximum DC blocking voltage
V_DC
100
Maximum average forward rectified output current at T_c = 105°C
per device
10
I_F(AV)
per diode
5
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I_FSM
120
Non-repetitive avalanche energy at T_J= 25°C, L = 40 mH, I_AS = 0.5A
E_AS
6
Peak repetitive reverse current at t_p = 2μs, 1 kHz, T_J = 38°C ± 2°C
l_RRM
0.5
Voltage rate of change (rated V_R)
dV/dt
10000
lsolation voltage (lTO-220AC only) From terminal to heatsink t = 1 min
V_AC
1500
Operating junction storage temperature range
T_J,T_STG -65 to +150
UNIT
V
V
V
A
A
mJ
A
V/μs
V
ºC
www.nellsemi.com
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