M55T Datasheet, PDF (1/5 Pages) Nell Semiconductor Co., Ltd – High current triac

SEMICONDUCTOR
M55T Series RRooHHSS
TRIACs, 55A
Sunbberless
FEATURES
High current triac
Low thermal resistance with clip bonding
Low thermal resistance insulation ceramic
for insulated TO-3 package
High commutation capability
Packages are RoHS compliant
APPLICATIONS
Due to their clip assembly techinque, they provide
a superior performance in surge current handling
capabilities.
By using an internal ceramic pad, the M55T series
provides voltage insulated tab (rated at 2500VRMS)
complying with UL standards.
The snubberless concept offer suppression of RC
network and it is suitable for applications such as :
Static relays
Solid state switches
Motor controls
Light dimmers
Copy machines
Microwave ovens
Heater controls
T2
T1
G
55
MAIN FEATURES
SYMBOL
I_T(RMS)
V_DRM/V_RRM
I_GT(Q1)
VALUE
55
800 to 1600
10 to 50
UNIT
A
V
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, T_j initial = 25°C)
I²t Value for fusing
Critical rate of rise of on-state current
I_G = 2xl_GT, t_r≤100ns
Peak gate current
Peak gate power dissipation (tp = 20µs)
Average gate power dissipation
I_T(RMS)
I_TSM
2
It
dI/dt
I_GM
P_GM
P_G(AV)
F =50 Hz
F =60 Hz
tp = 10 ms
F =120 Hz
T_p =20 µs
T_j =125ºC
T_j =125ºC
Storage temperature range
T_stg
Operating junction temperature range
T_j
TEST CONDITIONS
T_c = 90ºC
t = 20 ms
t = 16.7 ms
VALUE
55
550
600
1510
UNIT
A
A
A²s
T_j =125ºC
100
A/µs
T_j =125ºC
8
A
10
W
2
- 40 to + 150
ºC
- 40 to + 125
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