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| IRF450 Datasheet, PDF (1/7 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS | |||
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SEMICONDUCTOR
IRF450 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
14A, 500Volts
DESCRIPTION
The Nell IRF450 is a three-terminal silicon device
with current conduction capability of 14A, fast switching
speed, low on-state resistance, breakdown voltage
rating of 500V, and max. threshold voltage of 4 volts.
They are designed for use in applications such as
switched mode power supplies, DC to DC converters,
motor control, circuits UPS and general purpose
switching applications.
D
G
D
S
TO-3PB
(IRF450B)
G
D
S
TO-247AB
(IRF450C)
FEATURES
RDS(ON) = 0.40⦠@ VGS = 10V
Ultra low gate charge(150nC Max.)
Low reverse transfer capacitance
(CRSS = 340pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D (Drain)
G
(Gate)
S (Source)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
14
500
0.40 @ VGS = 10V
150
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
VDGR
VGS
Drain to Source voltage
Drain to Gate voltage
Gate to Source voltage
TJ=25°C to 150°C
RGS=20Kâ¦
ID
Continuous Drain Current (VGS=10V)
TC=25°C
TC=100°C
IDM
Pulsed Drain current(Note 1)
IAR
Avalanche current(Note 1)
EAR
Repetitive avalanche energy(Note 1)
lAR=14A, RGS=50Ω, VGS=10V
EAS
Single pulse avalanche energy(Note 2)
lAS=14A, L=7.0mH
dv/dt
Peak diode recovery dv/dt(Note 3)
Total power dissipation
PD
Derate above 25°C
TC=25°C
TJ
Operation junction temperature
TSTG
Storage temperature
TL
Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.lAS=14A, L=7.0mH, VDD=50V, RG =25Ω, starting TJ =25°C.
3.ISD ⤠14A, di/dt ⤠130A/µs, VDD ⤠V(BR)DSS, starting TJ = 25°C.
VALUE
UNIT
500
500
V
±20
14
8.7
A
56
8.7
19
mJ
760
3.5
V /ns
190
W
1.5
W /°C
-55 to 150
-55 to 150
ºC
300
10 (1.1)
lbf.in (N.m)
www.nellsemi.com
Page 1 of 7
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