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IRF4410 Datasheet, PDF (1/9 Pages) Nell Semiconductor Co., Ltd – N-Channel Power MOSFET
SEMICONDUCTOR
IRF4410 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(97A, 100Volts)
DESCRIPTION
The Nell IRF4410 is a three-terminal silicon
device with current conduction capability of 97A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 100V ,and max.
threshold voltage of 4 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits,
UPS and general purpose switching applications .
FEATURES
RDS(ON) = 9.0mΩ @ VGS = 10V
Ultra low gate charge(120nC max.)
Low reverse transfer capacitance
(CRSS = 170pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
175°C operation temperature
D
G
DS
TO-220AB
(IRF4410A)
D
G
S
TO-263(D2PAK)
(IRF4410H)
D (Drain)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (mΩ)
QG(nC) max.
97
100
9.0 @ VGS = 10V
120
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS
Gate to Source voltage
ID
Continuous Drain Current
TC=25°C
TC=100°C
IDM
Pulsed Drain current(Note 1)
IAR
Avalanche current(Note 1)
EAR
Repetitive avalanche energy(Note 1)
IAR=58A, RGS=50Ω, VGS=10V
EAS
Single pulse avalanche energy(Note 2)
IAS=58A, L=0.143mH
dv/dt
Peak diode recovery dv/dt(Note 3)
PD
Total power dissipation
TC=25°C
TJ
Operation junction temperature
TSTG
Storage temperature
TL
Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS = 58A, VDD = 50V, L = 0.143mH, RGS = 25Ω, starting TJ=25°C.
3.ISD ≤ 58A, di/dt ≤ 610A/µs, VDD ≤ V(BR)DSS, starting TJ≤175°C.
www.nellsemi.com
Page 1 of 9
VALUE
UNIT
100
100
V
±20
97
69
A
390
58
105
mJ
242
16
V /ns
230
W
-55 to 175
-55 to 175
ºC
300
10 (1.1)
lbf.in (N.m)