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IRF22N60 Datasheet, PDF (1/7 Pages) Nell Semiconductor Co., Ltd – N-Channel Power MOSFET
SEMICONDUCTOR
IRF22N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
22A, 600Volts
DESCRIPTION
The Nell IRF22N60 is a three-terminal silicon device
with current conduction capability of 22A, fast switching
speed, low on-state resistance, breakdown voltage
rating of 600V, and max. threshold voltage of 5 volts.
They are designed for use in applications such as
switched mode power supplies, DC to DC converters,
motor control circuits, UPS and general purpose
switching applications.
G
D
S
TO-247AB
(IRF22N60C)
FEATURES
RDS(ON) = 0.28Ω @ VGS = 10V
Ultra low gate charge(150nC Max.)
Low reverse transfer capacitance
(CRSS = 36pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D (Drain)
G
(Gate)
S (Source)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
22
600
0.28 @ VGS = 10V
150
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
VDGR
VGS
Drain to Source voltage
Drain to Gate voltage
Gate to Source voltage
TJ=25°C to 150°C
RGS=20KΩ
ID
Continuous Drain Current (VGS=10V)
TC=25°C
TC=100°C
IDM
Pulsed Drain current(Note 1)
IAR
Avalanche current(Note 1)
EAR
Repetitive avalanche energy(Note 1)
lAR=22A, RGS=50Ω, VGS=10V
EAS
Single pulse avalanche energy(Note 2)
lAS=22A, L=1.5mH
dv/dt
Peak diode recovery dv/dt(Note 3)
Total power dissipation
PD
Derate above 25°C
TC=25°C
TJ
Operation junction temperature
TSTG
Storage temperature
TL
Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.lAS=22A, L=1.5mH, VDD=50V, RG =25Ω, starting TJ =25°C.
3.ISD ≤ 22A, di/dt ≤ 540A/µs, VDD ≤ V(BR)DSS, starting TJ < 150°C.
VALUE
UNIT
600
600
V
±30
22
14
A
88
22
37
mJ
380
18
V /ns
370
W
2.9
W /°C
-55 to 150
-55 to 150
ºC
300
10 (1.1)
lbf.in (N.m)
www.nellsemi.com
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