IRF1010 Datasheet, PDF (1/7 Pages) Nell Semiconductor Co., Ltd – N-Channel Power MOSFET

SEMICONDUCTOR
IRF1010 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
DESCRIPTION
(84A, 60Volts)
The Nell IRF1010 is a three-terminal silicon
device with current conduction capability
D
of 84A, fast switching speed, low on-state
resistance, breakdown voltage rating of 60V,
and max. threshold voltage of 4 volts.
They are designed as an extremely efficient
and reliable device for use in a wide variety of
applications. These transistors can be operated
directly from integrated circuits.
G
D
S
D
G
D
S
FEATURES
R_DS(ON) = 8.5mΩ @ V_GS = 10V
Ultra low gate charge(86nC max.)
Low reverse transfer capacitance
(C_RSS = 200pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
175°C operation temperature
PRODUCT SUMMARY
I_D (A)
84
I_D (A), Package Limited
75
V_DSS (V)
60
R_DS(ON) (mΩ)
8.5 @ V_GS = 10V
Q_G(nC) max.
86
TO-220AB
(IRF1010A)
TO-263(D²PAK)
(IRF1010H)
D (Drain)
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VALUE
UNIT
V_DSS
V_DGR
V_GS
Drain to Source voltage
Drain to Gate voltage
Gate to Source voltage
T_J=25°C to 150°C
R_GS=20KΩ
60
60
V
±20
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
Continuous Drain Current (Note 1)
Pulsed Drain current(Note 2)
Avalanche current(Note 2)
Repetitive avalanche energy(Note 2)
Single pulse avalanche energy(Note 3)
Peak diode recovery dv/dt(Note 4)
V_GS=10V, T_C=25°C
V_GS=10V, T_C=100°C
See fig.12,16,17
L=0.077mH, I_AS=51A
84
60
A
340
51
mJ
99
5
V /ns
Total power dissipation
P_D
Derating factor above 25°C
T_C=25°C
140
0.90
W
W /°C
T_J
Operation junction temperature
-55 to 175
T_STG
Storage temperature
-55 to 175
ºC
T_L
Maximum soldering temperature, for 10 seconds 1.6mm from case
300
Mounting torque, #6-32 or M3 screw
10 (1.1)
Note: 1.Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
2.Repetitive rating: pulse width limited by junction temperature.
3.L=0.077mH, I_AS≤51A, R_G=25Ω, starting T_J=25˚C
4.I_SD ≤ 51A, di/dt ≤ 260A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
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lbf.in (N.m)