BUX48 Datasheet, PDF (1/8 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,400-450V,175W)

SEMICONDUCTOR
BUX48 / BUX48A RRooHHSS
Nell High Power Products
High Power NPN Silicon Transistors
(15A, 400V and 450V, 175W)
FEATURES
Designed for general-purpose switching
applications.
Collector-Emitter saturation voltage
V_CE(sat) = 1.5 V_dc (Max) @ l_C = 8 Adc
High voltage capability, high current capability
DESCRIPTION
The BUX48 is a silicon epitaxial-base mesa
NPN transistor mounted in JEDEC TO-3 metal
case.
lt is intended for power switching circuits and
industrial applications from single and three-
phase mains.
26.00 Max.
10.90
13.10 Max. 8.60
1.60
1
2
2-Φ4.0 Thru.
APPLICATIONS
Switch mode power supplies
Flyback and forward single transistor low
power converters
Inverters
Solenoid and Relay drivers
Motor controls
Deflection circuits
All dimensions in millimeters
1
2
TO-3
TAB
INTERNAL SCHEMATIC DIAGRAM
(1)
B
C (TAB)
(2)
E
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
V_CES
V_CER
V_CEO
V_EBO
I_C
I_CM
I_CP
I_B
I_BM
P_D
T_j
T_stg
T_L
Collector to emitter voltage (V_BE = 0)
Collector to emitter voltage (R_BE = 10Ω)
Collector to emitter voltage (I_B = 0)
Emitter to base voltage (I_C = 0)
Collector current
Collector peak current
Collector peak current, non repetitive (t_p < 20µs)
Base current
Base peak current
Total power dissipation
Derate above 25°C
T_C= 25°C
T_C= 100°C
Junction temperature
Storage temperature
Maximum lead temperature for soldering purposes : 1/8"
from case for 5 seconds
VALUE
BUX48 BUX48A
850
1000
850
1000
400
450
7
15
30
55
4
20
175
100
1.0
200
-65 to 200
275
UNIT
V
A
W
W/ºC
ºC
www.nellsemi.com
Page 1 of 8