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| BU508 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(5A,1500V,125W) | |||
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SEMICONDUCTOR
BU508 Series RRooHHSS
Nell High Power Products
High voltage NPN Power transistor
8A, 1500V
FEATURES
Stable performance vs. operating
temperature variation
High ruggedness
Tigth hFE range at operating collector current
TO-3P and TO-247AB package which can be
installed to the heat sink with one screw
APPLICATIONS
Switching mode power supplies and
general purpose
High frequency inverters
C
1
2
3
TO-247AB
(BU508C)
B
(1)
B
C
E
C (2)
NPN
E(3)
TO-3PB
(BU805B)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VCES
Collector to emitter voltage
VBE=0
VCEO
Collector to emitter voltage
IB=0
VEBO
Emitter to base voltage
IC=0
IC
Collector current-continuous
ICM
Peak collector current
tp<5 ms
IB
Base Current
PD
Collector power dissipation
TC=25°C
TJ
Junction temperature
TSTG
Storage temperature
VALUE
1500
700
9
8
15
4
125
150
-55 to 150
UNIT
V
A
W
°C
THERMAL CHARACTERISTICS (TC = 25°C)
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
VALUE
1.0
UNIT
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
ICES
lEBO
Collector cutoff current ( VBE = 0 )
Emitter cutoff current
VCEO=1500V, lE=0
VEBO=9V, lC=0
TC=25°C
TC=125°C
VCEO
Collector to emitter voltage
IB=0
VCEO(SUS)* Collector to emitter sustaining voltage IC=100mA
hFE*
VCE(sat)*
Forward current transfer ratio
(DC current gain)
IC=0.1A, VCE=5V
IC=4.5A, VCE=5V
Collector to emitter saturation voltage IC=4.5A, IB=1.6A
VBE(sat)* Base to emitter saturation voltage
IC=4.5A, IB=2A
tstg
Storage time
IC=4.5A, IB(on)=0.5A, VBE(off)=-2.7V
tf
Fall time
*Pulsed: Pulse duration= 300μs, duty cycle= 1.5%.
fh=16KHz, LBB(off)=4.5µH
www.nellsemi.com
Page 1 of 4
Min.
700
700
10
5
Typ.
2.5
0.2
Max.
0.2
2
1.0
30
1.0
1.1
UNIT
mA
V
V
µS
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