9N25 Datasheet, PDF (1/8 Pages) Nell Semiconductor Co., Ltd – N-Channel Power MOSFET

SEMICONDUCTOR
9N25 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(8.8A, 250Volts)
DESCRIPTION
The Nell 9N25 are N-channel enhancement mode
silicon gate power field effect transistors.
They are designed, tested and guaranteed to
minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency
switching DC/DC converters, switching mode power
supplies, DC-AC converters for uninterrupted power
supplies (UPS) and motor controls.
D
G
D
S
TO-220AB
(9N25A)
GDS
TO-220F
(9N25AF)
FEATURES
R_DS(ON) = 0.43Ω @ V_GS = 10V
Ultra low gate charge(35nC max.)
Low reverse transfer capacitance
(C_RSS = 45pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D (Drain)
G
(Gate)
S (Source)
PRODUCT SUMMARY
I_D (A)
V_DSS (V)
R_DS(ON) (Ω)
Q_G(nC) max.
8.8
250
0.45 @ V_GS = 10V
35
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
V_DSS
V_DGR
V_GS
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
Drain to Source voltage(Note 1)
Drain to Gate voltage
Gate to Source voltage
Continuous Drain Current
Pulsed Drain current (Note 1)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy(Note 1)
Single pulse avalanche energy (Note 2)
Peak diode recovery dv/dt(Note 3)
T_J=25°C to 150°C
R_GS=20KΩ
V_GS=10V, T_C=25°C
V_GS=10V, T_C=100°C
I_AR=8.8A, R_GS=50Ω, V_GS=10V
I_AS=8.8A, L=5.9mH
TO-220AB
P_D
Total power dissipation (Derating factor above 25°C) T_C=25°C
TO-220F
T_J
Operation junction temperature
T_STG
Storage temperature
T_L
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
1.6mm from case
VALUE
250
250
±30
8.8
5.6
35.2
8.8
7.4
285
5.5
74 (0.59)
38 (0.3)
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
mJ
V /ns
W(W /°C)
ºC
lbf.in (N.m)
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.V_DD=50V, L=5.9mH, I_AS=8.8A, R_G=25Ω,starting T_J=25˚C
3.I_SD ≤ 8.8A, di/dt ≤ 300A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C.
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