8N80 Datasheet, PDF (1/8 Pages) Unisonic Technologies – 800V N-CHANNEL MOSFET

SEMICONDUCTOR
8N80 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
DESCRIPTION
(8A, 800Volts)
The Nell 8N80 is a three-terminal silicon
device with current conduction capability of 8A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 800V ,and max.
threshold voltage of 5 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits,
and general purpose switching applications .
FEATURES
R_DS(ON) = 1.55Ω @ V_GS = 10V
Ultra low gate charge(35nC max.)
Low reverse transfer capacitance
(C_RSS = 13pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
PRODUCT SUMMARY
I_D (A)
8
V_DSS (V)
800
R_DS(ON) (Ω)
1.55 @ V_GS = 10V
Q_G(nC) max.
35
D
G
DS
TO-220AB
(8N80A)
D
G
D
S
TO-3PB
(8N80B)
GDS
TO-220F
(8N80AF)
D (Drain)
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
V_DSS
Drain to Source voltage
T_J=25°C to 150°C
V_DGR
Drain to Gate voltage
R_GS=20KΩ
V_GS
Gate to Source voltage
I_D
Continuous Drain Current
T_C=25°C
T_C=100°C
I_DM
Pulsed Drain current(Note 1)
I_AR
Avalanche current(Note 1)
E_AR
Repetitive avalanche energy(Note 1)
I_AR=8A, R_GS=50Ω, V_GS=10V
E_AS
Single pulse avalanche energy(Note 2)
I_AS=8A, L=25mH
dv/dt
Peak diode recovery dv/dt(Note 3)
TO-3PB
P_D
Total power dissipation (Derate above 25°C)
T_C=25°C TO-220AB
TO-220F
T_J
Operation junction temperature
T_STG
T_L
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
1.6mm from case
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.I_AS = 8A, V_DD = 50V, L = 25mH, R_GS = 25Ω, starting T_J=25°C.
3.I_SD ≤ 8A, di/dt ≤ 200A/µs, V_DD ≤ V_(BR)DSS, starting T_J=25°C.
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Page 1 of 8
VALUE
UNIT
800
800
V
±30
8
5.1
A
32
8
17.8
mJ
850
4.5
220 (1.75)
178 (1.43)
59 (0.48)
V /ns
W(W/°C)
-55 to 150
-55 to 150
300
10 (1.1)
ºC
lbf.in (N.m)