7N60 Datasheet, PDF (1/8 Pages) Unisonic Technologies – 7.4 Amps, 600 Volts N-CHANNEL MOSFET

SEMICONDUCTOR
7N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(7A, 600Volts)
DESCRIPTION
The Nell 7N60 is a three-terminal silicon
device with current conduction capability of 7A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 600V ,and max.
threshold voltage of 4 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits,
and general purpose switching applications .
FEATURES
R_DS(ON) = 1.0Ω @ V_GS = 10V
Ultra low gate charge(38nC max.)
Low reverse transfer capacitance
(C_RSS = 16pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
PRODUCT SUMMARY
I_D (A)
7
V_DSS (V)
600
R_DS(ON) (Ω)
1.0 @ V_GS = 10V
Q_G(nC) max.
38
D
G
DS
TO-220AB
(7N60A)
D
G
S
TO-263(D²PAK)
(7N60H)
GDS
TO-220F
(7N60AF)
D (Drain)
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
V_DSS
Drain to Source voltage
T_J=25°C to 150°C
V_DGR
Drain to Gate voltage
R_GS=20KΩ
V_GS
Gate to Source voltage
I_D
Continuous Drain Current
T_C=25°C
T_C=100°C
I_DM
Pulsed Drain current(Note 1)
I_AR
Avalanche current(Note 1)
E_AR
Repetitive avalanche energy(Note 1)
I_AR=7A, R_GS=50Ω, V_GS=10V
E_AS
Single pulse avalanche energy(Note 2)
I_AS=7A, L=19.5mH
dv/dt
Peak diode recovery dv/dt(Note 3)
P_D
Total power dissipation
TO-220AB/TO-263
T_C=25°C
TO-220F
T_J
Operation junction temperature
T_STG
Storage temperature
T_L
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.I_AS = 7A, V_DD = 50V, L = 19.5mH, R_GS = 25Ω, starting T_J=25°C.
3.I_SD ≤ 7A, di/dt ≤ 200A/µs, V_DD ≤ V_(BR)DSS, starting T_J=25°C.
1.6mm from case
www.nellsemi.com
Page 1 of 8
VALUE
600
600
±30
7
4.3
28
7
14
500
4.5
140
48
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
V /ns
W
ºC
lbf.in (N.m)