70PT_14 Datasheet, PDF (1/4 Pages) Nell Semiconductor Co., Ltd – Stansard SCRs, 70A

SEMICONDUCTOR
70PT Series _RRooHHSS
Stansard SCRs, 70A
Main Features
Symbol
I_T(RMS)
V_DRM/V_RRM
I_GT
Value
75
800 to 1800
100
Unit
A
V
mA
DESCRIPTION
The 70PT series of silicon controlled rectifiers are
high performance glass passivated technology,
and are suitable for general purpose applications,
where power handling and power dissipation are
critical, such as solid state relay, welding equipment
high power motor control, high power switching and
phase control applications.
Base on a clip assembly technology, they offer a
superior performance in surge current capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation(2500V_RMS).
1
2
3
TO-247S (non-Insulated)
(70PTxxD)
2(A)
3(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RMS on-state current full sine wave
(180° conduction angle )
Lead current limitation
I_{T(RMS) TO-247S}
Average on-state current
(180° conduction angle)
I_T(AV)
Non repetitive surge peak on-state
current (full cycle, T_j initial = 25°C)
I²t Value for fusing
Critical rate of rise of on-state current
V_D = 67% V_DRM, t_p = 200μs, I_G = 0.3A
d_IG/dt = 0.3A/μs
I_TSM
I²t
dI/dt
Peak gate current
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
I_GM
P_GM
P_G(AV)
V_DRM
V_RRM
T_stg
T_j
Maximum peak reverse gate voltage V_RGM
TO-247S
F =50 Hz
F =60 Hz
t_p = 10 ms
F = 60 Hz
T_p = 20 µs
T_p =20µs
T_j =125ºC
T_j =125ºC
TEST CONDITIONS
T_c=80°C
VALUE
UNIT
75
A
T_c=80°C
t = 20 ms
t = 16.7 ms
T_j = 125ºC
70
1300
1500
8450
150
A
A
A²s
A/µs
T_j = 125ºC
2.5
A
T_j = 125ºC
10
W
2
W
800 to 1800
V
- 40 to + 150
ºC
- 40 to + 125
5
V
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