6PT_14 Datasheet, PDF (1/5 Pages) Nell Semiconductor Co., Ltd – Stansard SCRs, 6A

SEMICONDUCTOR
6PT Series _RRooHHSS
Stansard SCRs, 6A
Main Features
Symbol
I_T(RMS)
V_DRM/V_RRM
I_GT
Value
6
600 to 1000
15
Unit
A
V
mA
2
1
2
3
TO-251 (I-PAK)
(6PTxxF)
2
2
1
3
TO-252 (D-PAK)
(6PTxxG)
DESCRIPTION
The 6PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
designed for power supply up to 400Hz on resistive or
inductive load.
2
1
2
3
1
2
3
TO-220AB (Non-lnsulated) TO-220AB (lnsulated)
(6PTxxA)
(6PTxxAI)
2(A)
3(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
I_T(RMS)
I_T(AV)
TO-251/TO-252/TO-220AB
TO-220AB insulated
TO-251/TO-252/TO-220AB
TO-220AB insulated
Tc=110°C
Tc=105°C
Tc=110°C
Tc=105°C
Non repetitive surge peak on-state
current (full cycle, T_j initial = 25°C)
I²t Value for fusing
F =50 Hz
I_TSM
F =60 Hz
I²t
t_p = 10 ms
t = 20 ms
t = 16.7 ms
Critical rate of rise of on-state current
I_G = 2xl_GT, t_r≤100ns
Peak gate current
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
dI/dt
I_GM
P_GM
P_G(AV)
V_DRM
V_RRM
T_stg
F = 60 Hz
T_p = 20 µs
T_p =20µs
T_j =125ºC
T_j = 125ºC
T_j = 125ºC
T_j = 125ºC
T_j =125ºC
Operating junction temperature range
T_j
VALUE
6
3.8
70
73
24.5
50
4
10
1
600 to 1000
- 40 to + 150
- 40 to + 125
UNIT
A
A
A
A²s
A/µs
A
W
W
V
ºC
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