65N06 Datasheet, PDF (1/8 Pages) Nell Semiconductor Co., Ltd – N-Channel Power MOSFET

SEMICONDUCTOR
65N06 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(63A, 55Volts)
DESCRIPTION
The Nell 65N06 is a three-terminal silicon
device with current conduction capability
of 63A, fast switching speed, low on-state
resistance, breakdown voltage rating of 55V,
and max. threshold voltage of 4 volts.
They are designed as an extremely efficient
and reliable device and has integral zener
giving diodes ESD protection up to 2KV.
They are intended for use in DC to DC
convertors and general purpose switching
applications.
FEATURES
R_DS(ON) = 18mΩ@V_GS = 10V
Ultra low gate charge(40nC typical)
Low reverse transfer capacitance
(C_RSS = 170pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
175°C operation temperature
D
G
DS
TO-220AB
(65N06A)
D
G
S
TO-263 (D²PAK)
(65N06H)
D (Drain)
PRODUCT SUMMARY
I_D (A)
V_DSS (V)
R_DS(ON) (Ω)
Q_G(nC) typ.
63
60
0.018 @ V_GS = 10V
40
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
V_DSS
Drain to Source voltag
T_J=25°C to 150°C
V_DGR
Drain to Gate voltage
R_GS=20KΩ
V_GS
Gate to Source voltage
I_D
I_DM
dv/dt
P_D
Continous Drain Current
Pulsed Drain current(Note 1)
Peak diode recovery dv/dt(Note 2)
Total power dissipation
Derating factor above 25°C
V_GS=10V , T_C=25°C
V_GS=10V , T_C=100°C
T_C=25°C
Human body model
V_C
Electro-static Discharge capacitor voltage, all pins
(100 pF, 1.5KΩ)
VALUE
55
55
±20
63
44
240
7.0
150
1.0
2
UNIT
V
A
V /ns
W
W/°C
KV
T_J
Operation junction temperature
T_STG
Storage temperature
T_L
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.I_SD ≤ 50A, di/dt ≤ 300A/us, V_DD ≤ V_(BR)DSS, starting T_J=25°C.
www.nellsemi.com
Page 1 of 8
1.6mm from case
-55 to 175
-55 to 175
ºC
300
10 (1.1) lbf.in (N.m)