5N90 Datasheet, PDF (1/8 Pages) Unisonic Technologies – 5 Amps, 900 Volts N-CHANNEL POWER MOSFET

SEMICONDUCTOR
5N90 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(5A, 900Volts)
DESCRIPTION
The Nell 5N90 is a three-terminal silicon device with
current conduction capability of 5A, fast switching
speed, low on-state resistance, breakdown voltage
rating of 900V, and max. threshold voltage of 5 volts.
They are designed for use in applications such as
switched mode power supplies, DC to DC converters,
PWM motor controls, bridge circuits and general
purpose switching applications.
D
G
D
S
TO-220AB
(5N90A)
GDS
TO-220F
(5N90AF)
FEATURES
R_DS(ON) = 2.80Ω @ V_GS = 10V
Ultra low gate charge(40nC max.)
Low reverse transfer capacitance
(C_RSS = 13pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D (Drain)
G
(Gate)
S (Source)
PRODUCT SUMMARY
I_D (A)
V_DSS (V)
R_DS(ON) (Ω)
Q_G(nC) max.
5
900
2.80 @ V_GS = 10V
40
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
V_DSS
V_DGR
V_GS
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
Drain to Source voltage(Note 1)
Drain to Gate voltage
Gate to Source voltage
Continuous Drain Current
Pulsed Drain current (Note 1)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy(Note 1)
Single pulse avalanche energy (Note 2)
Peak diode recovery dv/dt(Note 3)
T_J=25°C to 150°C
R_GS=20KΩ
T_C=25°C
T_C=100°C
I_AR=5A, R_GS=50Ω, V_GS=10V
I_AS=5A, L=52.8mH
TO-220AB
P_D
Total power dissipation (Derating factor above 25°C) T_C=25°C
TO-220F
T_J
Operation junction temperature
T_STG
Storage temperature
T_L
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
1.6mm from case
VALUE
900
900
±30
5
3.1
12
5
5.1
660
4.0
125
38
UNIT
V
A
mJ
V /ns
W(W /°C)
-55 to 150
-55 to 150
ºC
300
10 (1.1)
lbf.in (N.m)
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.V_DD=50V, L=52.8mH, I_AS=5A, R_GS=25Ω,starting T_J=25˚C
3.I_SD ≤ 5.4A, di/dt ≤ 200A/µs, V_DD ≤ V_(BR)DSS, starting T_J = 25°C.
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