4PT_14 Datasheet, PDF (1/7 Pages) Nell Semiconductor Co., Ltd – Sensitive gate SCRs, 4A

SEMICONDUCTOR
4PT Series _RRooHHSS
Sensitive gate SCRs, 4A
Main Features
Symbol
I_T(RMS)
V_DRM/V_RRM
I_GT
Value
4
600 to 800
10 to 200
Unit
A
V
µA
2
1
2
3
TO-251 (I-PAK)
(4PTxxF)
2
2
1
3
TO-252 (D-PAK)
(4PTxxG)
2
DESCRIPTION
Thanks to highly sensitive triggering levels, the 4PT
series is suitable for all applications where the
available gate current is limited, such as motor
control for hand tools, kitchen aids, capacitive
discharge ignitions, overvoltage crowbar protection
for low power supplies among others.
1
2
3
TO-220AB (Non-lnsulated)
(4PTxxA)
1
2
3
TO-220AB (lnsulated)
(4PTxxAI)
Available in through-hole or surface-mount packages,
they provide an optimized performance in a limited
space area.
1
2
3
TO-126 (Non-lnsulated)
(4PTxxAM)
1
2
3
TO-202-3
(4PTxxAT)
2(A)
3(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current (full cycle, T_j initial = 25°C)
I²t Value for fusing
I_T(RMS)
I_T(AV)
I_TSM
I²t
TO-251/TO-252/TO-220AB
TO-220AB insulated
TO-126
TO-202-3
TO-251/TO-252/TO-220AB
TO-220AB insulated
TO-126
TO-202-3
F =50 Hz
F =60 Hz
t_p = 10 ms
T_c=115°C
T_c=110°C
T_c=95°C
T_c=60°C
T_c=115°C
T_c=110°C
T_c=95°C
T_c=60°C
t = 20 ms
t = 16.7 ms
Critical rate of rise of on-state current
I_G = 2xl_GT, t_r≤100ns
Peak gate current
dI/dt
I_GM
F = 60 Hz
T_p = 20 µs
T_j = 125ºC
T_j = 125ºC
Average gate power dissipation
P_G(AV) T_j =125ºC
Repetitive peak off-state voltage
Repetitive peak reverse voltage
V_DRM
V_RRM
T_j =125ºC
Storage temperature range
T_stg
Operating junction temperature range
T_j
VALUE
4
2.5
30
33
4.5
50
1.2
0.2
600 and 800
- 40 to + 150
- 40 to + 125
UNIT
A
A
A
A²s
A/µs
A
W
V
ºC
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